Structure and Properties of Ti-B-C Films Deposited by DC Magnetron Sputtering of TiB2 and B4 C Targets

The films in Ti-B-C system have been deposited onto Si (100) substrates by dual direct current magnetron sputtering of TiB2 and B4 C targets. During deposition, the sputtering parameters at the TiB2 target were unchanged, whereas sputtering current at the B4 C target was varied in the range of 50-200 mA. The films were characterized in terms of their structure, composition, and mechanical properties. The X-ray diffraction measurements showed that all the films contain only TiB2 crystalline phase of prominent (001) and (002) textures. The film hardness first increased reaching maximum value of about 53.5 GPa for films deposited with 100 mA B4 C sputtering current, and then it decreased with increasing current. The coefficient of friction of films was unchanged with increasing the sputtering current at B4 C target.