Z. Tan, Youngcheol Chae, R. Daamen, A. Humbert, Youri Ponomarev, M. Pertijs
{"title":"一种用于RFID应用的1.2V 8.3nJ节能CMOS湿度传感器","authors":"Z. Tan, Youngcheol Chae, R. Daamen, A. Humbert, Youri Ponomarev, M. Pertijs","doi":"10.1109/VLSIC.2012.6243771","DOIUrl":null,"url":null,"abstract":"A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"21 1","pages":"24-25"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications\",\"authors\":\"Z. Tan, Youngcheol Chae, R. Daamen, A. Humbert, Youri Ponomarev, M. Pertijs\",\"doi\":\"10.1109/VLSIC.2012.6243771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.\",\"PeriodicalId\":6347,\"journal\":{\"name\":\"2012 Symposium on VLSI Circuits (VLSIC)\",\"volume\":\"21 1\",\"pages\":\"24-25\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Circuits (VLSIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2012.6243771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Circuits (VLSIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2012.6243771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications
A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
