C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad
{"title":"InAlAs/InAs MODFET","authors":"C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad","doi":"10.1109/ICIPRM.1991.147396","DOIUrl":null,"url":null,"abstract":"The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-off (V/sub th/=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"77 1","pages":"385-388"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"An InAlAs/InAs MODFET\",\"authors\":\"C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad\",\"doi\":\"10.1109/ICIPRM.1991.147396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-off (V/sub th/=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"77 1\",\"pages\":\"385-388\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147396\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-off (V/sub th/=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer.<>
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