近红外雪崩二极管单光子探测器的研究进展

Chip Pub Date : 2022-03-01 DOI:10.1016/j.chip.2022.100005
Chen Liu , Hai-Feng Ye , Yan-Li Shi
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引用次数: 9

摘要

基于雪崩光电二极管的近红外单光子探测器由于其内部增益大、灵敏度高、响应快、体积小、易于集成等优点,在近二十年来得到了迅速发展。InGaAs/InP近红外单光子探测器是目前应用最广泛的雪崩二极管。其器件性能仍在通过器件结构和外部淬火电路的优化不断提高。本文分析了这些InGaAs/InP光电二极管的最新发展和应用,并简要介绍了其他基于新材料和新机制的近红外单光子探测技术。
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Advances in near-infrared avalanche diode single-photon detectors

Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration. The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present. Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits. This paper analyzes the latest development and application of these InGaAs/InP photodiodes, then briefly reviews other near-infrared single-photon detection technologies based on new materials and new mechanisms.

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