V. Chan, M. Bergendahl, S. Choi, A. Gaul, J. Strane, A. Greene, J. Demarest, J. Li, C. Le, S. Teehan, D. Guo
{"title":"环振失效的中线工艺研究","authors":"V. Chan, M. Bergendahl, S. Choi, A. Gaul, J. Strane, A. Greene, J. Demarest, J. Li, C. Le, S. Teehan, D. Guo","doi":"10.1109/ASMC49169.2020.9185254","DOIUrl":null,"url":null,"abstract":"Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Middle of Line (MOL) Process Investigation in Ring Oscillator failure\",\"authors\":\"V. Chan, M. Bergendahl, S. Choi, A. Gaul, J. Strane, A. Greene, J. Demarest, J. Li, C. Le, S. Teehan, D. Guo\",\"doi\":\"10.1109/ASMC49169.2020.9185254\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"21 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185254\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Middle of Line (MOL) Process Investigation in Ring Oscillator failure
Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
