氮化铬缓冲层对氮化镓在6H-SiC上氢化物气相外延生长的表面极性影响

{"title":"氮化铬缓冲层对氮化镓在6H-SiC上氢化物气相外延生长的表面极性影响","authors":"J. Park, H. Lee, S. W. Lee, J. Ha, S. Nagata, S. Hong, H. Lee, M. Cho, T. Yao","doi":"10.1149/2.014205ESL","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer\",\"authors\":\"J. Park, H. Lee, S. W. Lee, J. Ha, S. Nagata, S. Hong, H. Lee, M. Cho, T. Yao\",\"doi\":\"10.1149/2.014205ESL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":11627,\"journal\":{\"name\":\"Electrochemical and Solid State Letters\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrochemical and Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.014205ESL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.014205ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}