cuu3ti4o12 -(NaBi)0.5Cu3Ti4O12复合材料的制备及介电性能

Rong Yu, Laura Chen, H. Xue, Z. Xiong
{"title":"cuu3ti4o12 -(NaBi)0.5Cu3Ti4O12复合材料的制备及介电性能","authors":"Rong Yu, Laura Chen, H. Xue, Z. Xiong","doi":"10.1109/ISAPM.2011.6105669","DOIUrl":null,"url":null,"abstract":"The composites of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>-x(NaBi)<inf>0.5</inf>Cu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×10<sup>5</sup>, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from −20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and dielectric properties of CaCu3Ti4O12-(NaBi)0.5Cu3Ti4O12 composites\",\"authors\":\"Rong Yu, Laura Chen, H. Xue, Z. Xiong\",\"doi\":\"10.1109/ISAPM.2011.6105669\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The composites of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>-x(NaBi)<inf>0.5</inf>Cu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×10<sup>5</sup>, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from −20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.\",\"PeriodicalId\":6440,\"journal\":{\"name\":\"2011 International Symposium on Advanced Packaging Materials (APM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Symposium on Advanced Packaging Materials (APM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAPM.2011.6105669\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Symposium on Advanced Packaging Materials (APM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2011.6105669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

制备了ccu3ti4o12 -x(NaBi)0.5Cu3Ti4O12复合材料,即CCTO-xNBCTO, x值为0 ~ 0.1。当x=0.05时,复合材料的介电常数ε =7×105,介电损耗tanδ = 0.48。通过LCR测量,研究了晶体结构与XRD谱与介电性能之间的关系。用内阻挡层电容效应来解释这种介电行为的机理。在20Hz ~ 1MHz范围内测量了CCTO-NBCTO复合材料介电常数的频率依赖性,发现损耗正切随频率的增加而明显减小。得到了样品的介电常数和损耗正切与温度的关系。结果表明,在- 20 ~ 80℃范围内,介质的介电性能与温度基本无关,但在80℃以上,随着温度的进一步升高,损耗正切值急剧增加。
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Preparation and dielectric properties of CaCu3Ti4O12-(NaBi)0.5Cu3Ti4O12 composites
The composites of CaCu3Ti4O12-x(NaBi)0.5Cu3Ti4O12, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×105, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from −20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.
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