760 GHz下NbN/AlN/NbN隧道结和NbN调谐电路的准光SIS混频器性能

Yoshinori Uzawa, Zhen Wang, Akira Kawakami
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引用次数: 12

摘要

设计并测试了一种用于太赫兹波段的全nbn准光学超导体-绝缘体-超导体(SIS)混频器。该混频器由带抗反射帽的MgO超半球透镜、NbN双槽天线和NbN调谐电路组成。NbN/AlN/NbN结直径约为0.5 μm,电流密度约为30 kA/cm2。该结具有良好的直流I-V特性,具有约5.4 mV的高隙电压和小的子隙漏电流。采用标准y因子法测得的双侧带(DSB)接收机噪声温度在761 GHz时约为2700 K。这个值远远高于基于塔克混合量子理论计算的实验I-V曲线的理论灵敏度。实验混频器性能与理论混频器性能的差异可能是由SiO制备的NbN调谐电路中较大的射频损耗造成的。
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Performance of quasi-optical SIS mixer with NbN/AlN/NbN tunnel junctions and NbN tuning circuit at 760 GHz

An all-NbN quasi-optical superconductor–insulator–superconductor (SIS) mixer for the terahertz band has been designed and tested. This mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, an NbN twin-slot antenna, and NbN tuning circuits. The size of the NbN/AlN/NbN junction was about 0.5 μm in diameter, and the current density was about 30 kA/cm2. The junctions showed good d.c. IV characteristics, with a high gap voltage of about 5.4 mV and a small sub-gap leakage current. The double side band (DSB) receiver noise temperature, measured by the standard Y-factor method, was about 2700 K at 761 GHz. This value is much higher than the theoretical sensitivity based on the experimental IV curve calculated using Tucker’s quantum theory of mixing. The difference between experimental and theoretical mixer performance may result from large RF losses in the tuning circuit of NbN fabricated on SiO.

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