F. Pintacuda, V. Cantarella, M. Muschitiello, S. Massetti
{"title":"辐射硬化SiC MOS结构的原型与表征","authors":"F. Pintacuda, V. Cantarella, M. Muschitiello, S. Massetti","doi":"10.1109/ESPC.2019.8931985","DOIUrl":null,"url":null,"abstract":"This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizations and radiation tests, in order to study the contributions of any basic element that composes the MOSFET structure to radiation sensitivity in a dedicated way.","PeriodicalId":6734,"journal":{"name":"2019 European Space Power Conference (ESPC)","volume":"17 1","pages":"1-8"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Prototyping and characterization of radiation hardened SiC MOS structures\",\"authors\":\"F. Pintacuda, V. Cantarella, M. Muschitiello, S. Massetti\",\"doi\":\"10.1109/ESPC.2019.8931985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizations and radiation tests, in order to study the contributions of any basic element that composes the MOSFET structure to radiation sensitivity in a dedicated way.\",\"PeriodicalId\":6734,\"journal\":{\"name\":\"2019 European Space Power Conference (ESPC)\",\"volume\":\"17 1\",\"pages\":\"1-8\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 European Space Power Conference (ESPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESPC.2019.8931985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 European Space Power Conference (ESPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESPC.2019.8931985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Prototyping and characterization of radiation hardened SiC MOS structures
This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizations and radiation tests, in order to study the contributions of any basic element that composes the MOSFET structure to radiation sensitivity in a dedicated way.
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