SiGe点MOS隧道二极管的新型输运机制

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI:10.1109/NANO.2007.4601423

P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu

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引用次数: 0

摘要

在金属氧化物半导体(MOS)隧道二极管中首次观察到SiGe量子点中由于多余空穴而导致的空穴输运阻塞。从Pt栅极到p型Si的空穴隧穿电流在正栅极偏置处主导反转电流，比Al栅极/氧化物/p型Si器件高7个数量级。与Pt/氧化物/p-Si器件相比，SiGe量子点将多余的空穴限制在价带内，并形成排斥势垒，使Pt到SiGe量子点的空穴输运电流降低了3个数量级。这种排斥性势垒还减少了SiGe量子点到Pt的空穴隧穿电流，以产生正栅偏压下的累积电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel transport mechanism of SiGe dot MOS tunneling diodes

The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.

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2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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