{"title":"与硫化镉形成欧姆接触","authors":"P. Stewart, R. Wilson","doi":"10.1088/0508-3443/18/11/125","DOIUrl":null,"url":null,"abstract":"A relationship has been observed between the density of triangular etch pits on (1010) faces of some single-crystal samples of CdS and the relative difficulty encountered in making indium-diffused ohmic contacts to these specimens. Various workers have observed a relationship between etch-pit and dislocation densities in CdS. The results suggest that the important diffusion mechanism in making contacts is by diffusion into dislocations.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"47 1","pages":"1657-1658"},"PeriodicalIF":0.0000,"publicationDate":"1967-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Formation of ohmic contacts to cadmium sulphide\",\"authors\":\"P. Stewart, R. Wilson\",\"doi\":\"10.1088/0508-3443/18/11/125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A relationship has been observed between the density of triangular etch pits on (1010) faces of some single-crystal samples of CdS and the relative difficulty encountered in making indium-diffused ohmic contacts to these specimens. Various workers have observed a relationship between etch-pit and dislocation densities in CdS. The results suggest that the important diffusion mechanism in making contacts is by diffusion into dislocations.\",\"PeriodicalId\":9350,\"journal\":{\"name\":\"British Journal of Applied Physics\",\"volume\":\"47 1\",\"pages\":\"1657-1658\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1967-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"British Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0508-3443/18/11/125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/11/125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A relationship has been observed between the density of triangular etch pits on (1010) faces of some single-crystal samples of CdS and the relative difficulty encountered in making indium-diffused ohmic contacts to these specimens. Various workers have observed a relationship between etch-pit and dislocation densities in CdS. The results suggest that the important diffusion mechanism in making contacts is by diffusion into dislocations.
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