一个0.41µA待机泄漏32Kb嵌入式SRAM，采用28nm HKMG CMOS全数字电流比较器，具有低压恢复待机功能

2012 Symposium on VLSI Circuits (VLSIC) Pub Date : 2012-06-13 DOI:10.1109/VLSIC.2012.6243788

N. Maeda, S. Komatsu, M. Morimoto, Y. Shimazaki

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引用次数: 8

摘要

提出了一种高性能、低漏电流的手机嵌入式SRAM。所提出的SRAM具有低电压恢复-待机模式，以减少待机泄漏。还提出了一种全数字电流比较器，以选择合适的待机模式。采用28nm HKMG CMOS工艺制作了测试芯片。所提出的32 Kb SRAM在420 ps的访问下实现了0.41 μA的待机泄漏，是常规值的一半。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.41µA standby leakage 32Kb embedded SRAM with Low-Voltage resume-standby utilizing all digital current comparator in 28nm HKMG CMOS

A high-performance and low-leakage current embedded SRAM for mobile phones is proposed. The proposed SRAM has a low-voltage resume-standby mode to reduce the standby leakage. An all digital current comparator is also proposed to choose a suitable standby mode. A test chip was fabricated using 28 nm HKMG CMOS technology. The proposed 32 Kb SRAM achives 0.41 μA standby leakage which is half of the conventional value, with 420 ps access.

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2012 Symposium on VLSI Circuits (VLSIC)

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