TSV、3D集成电路和3D硅集成的发展、挑战和展望

J. Lau
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引用次数: 155

摘要

3D集成包括3D IC封装、3D IC集成和3D Si集成。它们是不同的,一般来说,TSV(通硅通孔)将3D IC封装与3D IC/Si集成分开,因为后两者使用TSV,但3D IC封装没有。TSV(每个芯片或中间层都可以有两个带电路的表面的新概念)是3D IC/Si集成的核心,也是本研究的重点。介绍了三维集成的起源。此外,还讨论了3D IC/Si集成的发展、挑战和前景,并给出了它们的发展路线图。最后,提出了几种通用的、低成本的、热增强的3D集成电路系统级封装(sip),采用各种无源TSV中间体。
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Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
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