采用金属辅助化学蚀刻的高向硅结构

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI:10.1109/NANO.2016.7751348

N. Toan, M. Toda, T. Ono

{"title":"采用金属辅助化学蚀刻的高向硅结构","authors":"N. Toan, M. Toda, T. Ono","doi":"10.1109/NANO.2016.7751348","DOIUrl":null,"url":null,"abstract":"This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"720-723"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High aspect silicon structures using metal assisted chemical etching\",\"authors\":\"N. Toan, M. Toda, T. Ono\",\"doi\":\"10.1109/NANO.2016.7751348\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.\",\"PeriodicalId\":6646,\"journal\":{\"name\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"1 1\",\"pages\":\"720-723\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2016.7751348\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751348","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了金属辅助化学蚀刻(MACE)在高向硅结构中的应用。MACE已实现了400和80的超高向沟和超高向柱。此外，还利用装配技术演示了基于上述支柱的悬臂制造。柱子组装在玻璃基板上，用导电胶固定。所制备的悬臂梁谐振频率为235 kHz，质量因数为800。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

High aspect silicon structures using metal assisted chemical etching

This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

自引率

0.00%

发文量