M. Lisiansky, Y. Roizin, M. Gutman, S. Keysar, A. Ben-Guigui, M. Berreby
{"title":"ONO在microFlash/sup /spl / reg/工艺流程的不同阶段充电","authors":"M. Lisiansky, Y. Roizin, M. Gutman, S. Keysar, A. Ben-Guigui, M. Berreby","doi":"10.1109/ICICDT.2004.1309951","DOIUrl":null,"url":null,"abstract":"In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that allows to screen out the operations responsible for ONO charging and corresponding equipment.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"65 1","pages":"231-235"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"ONO charging at different stages of microFlash/sup /spl reg// process flow\",\"authors\":\"M. Lisiansky, Y. Roizin, M. Gutman, S. Keysar, A. Ben-Guigui, M. Berreby\",\"doi\":\"10.1109/ICICDT.2004.1309951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that allows to screen out the operations responsible for ONO charging and corresponding equipment.\",\"PeriodicalId\":6737,\"journal\":{\"name\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"65 1\",\"pages\":\"231-235\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
ONO charging at different stages of microFlash/sup /spl reg// process flow
In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that allows to screen out the operations responsible for ONO charging and corresponding equipment.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
