{"title":"剂量率对超浅表面掺杂形态的影响","authors":"Shao-Yu Hu, G. Lin, Ching-I Li, Hong Lu, Z. Wan","doi":"10.1109/IIT.2014.6939964","DOIUrl":null,"url":null,"abstract":"Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of dose rate on ultra shallow surface dopant profile\",\"authors\":\"Shao-Yu Hu, G. Lin, Ching-I Li, Hong Lu, Z. Wan\",\"doi\":\"10.1109/IIT.2014.6939964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"1 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6939964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of dose rate on ultra shallow surface dopant profile
Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
