S. Goswami, S. Hall, W. Wyko, J. Elson, J. Galea, J. Kretchmer
{"title":"通过故障模式和根本原因分析在线光刻胶缺陷减少:主题/类别:EO(设备优化)/ DR(缺陷减少)","authors":"S. Goswami, S. Hall, W. Wyko, J. Elson, J. Galea, J. Kretchmer","doi":"10.1109/ASMC49169.2020.9185269","DOIUrl":null,"url":null,"abstract":"This paper describes a data driven method to investigate in-line defect elevations, analyze root causes and thereafter, implement systematic improvements in manufacturing process and equipment. The problem described is an elevated random defect, observed post-patterning, and traced to incoming particulates in photoresist and/or spin-on dielectrics. The detailed analysis of inspection and defect metrology data leads to systematic diagnosis and improvement in the point-of-use photoresist filtration along with minimal downtime of the photoresist line. The methodology described is a good reference method for fab lines, when faced with similar ’special-cause’ defect problems that originate from incoming wet chemicals.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"In-line Photoresist Defect Reduction through Failure Mode and Root-Cause Analysis:Topics/categories: EO (Equipment Optimization)/ DR (Defect Reduction)\",\"authors\":\"S. Goswami, S. Hall, W. Wyko, J. Elson, J. Galea, J. Kretchmer\",\"doi\":\"10.1109/ASMC49169.2020.9185269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a data driven method to investigate in-line defect elevations, analyze root causes and thereafter, implement systematic improvements in manufacturing process and equipment. The problem described is an elevated random defect, observed post-patterning, and traced to incoming particulates in photoresist and/or spin-on dielectrics. The detailed analysis of inspection and defect metrology data leads to systematic diagnosis and improvement in the point-of-use photoresist filtration along with minimal downtime of the photoresist line. The methodology described is a good reference method for fab lines, when faced with similar ’special-cause’ defect problems that originate from incoming wet chemicals.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"1 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In-line Photoresist Defect Reduction through Failure Mode and Root-Cause Analysis:Topics/categories: EO (Equipment Optimization)/ DR (Defect Reduction)
This paper describes a data driven method to investigate in-line defect elevations, analyze root causes and thereafter, implement systematic improvements in manufacturing process and equipment. The problem described is an elevated random defect, observed post-patterning, and traced to incoming particulates in photoresist and/or spin-on dielectrics. The detailed analysis of inspection and defect metrology data leads to systematic diagnosis and improvement in the point-of-use photoresist filtration along with minimal downtime of the photoresist line. The methodology described is a good reference method for fab lines, when faced with similar ’special-cause’ defect problems that originate from incoming wet chemicals.