V. Shur, E. L. Rumyantsev, S. Makarov, V. V. Volegov
{"title":"铁电薄膜中的开关:如何从传统电流数据中提取有关畴动力学的信息","authors":"V. Shur, E. L. Rumyantsev, S. Makarov, V. V. Volegov","doi":"10.1109/ISAF.1994.522457","DOIUrl":null,"url":null,"abstract":"In this paper we demonstrate the possibility of extracting original detail information about domain kinetics during polarization reversal in thin ferroelectric films from the switching current data. The developed method of mathematical treatment was verified by computer simulations and direct experiments in model ferroelectric single crystals.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"4 1","pages":"669-673"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Switching in ferroelectric thin films: how to extract information about domain kinetics from traditional current data\",\"authors\":\"V. Shur, E. L. Rumyantsev, S. Makarov, V. V. Volegov\",\"doi\":\"10.1109/ISAF.1994.522457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we demonstrate the possibility of extracting original detail information about domain kinetics during polarization reversal in thin ferroelectric films from the switching current data. The developed method of mathematical treatment was verified by computer simulations and direct experiments in model ferroelectric single crystals.\",\"PeriodicalId\":20488,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"4 1\",\"pages\":\"669-673\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1994.522457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1994.522457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Switching in ferroelectric thin films: how to extract information about domain kinetics from traditional current data
In this paper we demonstrate the possibility of extracting original detail information about domain kinetics during polarization reversal in thin ferroelectric films from the switching current data. The developed method of mathematical treatment was verified by computer simulations and direct experiments in model ferroelectric single crystals.