3英寸InP衬底上N-AlInAs/InGaAs异质结构的均匀MBE生长和HEMT制备

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147459

K. Imanishi, T. Ishikawa, M. Higuchi, K. Kondo, T. Katakami, S. Kuroda

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引用次数: 1

摘要

结果表明，在3-in InP衬底上，使用无in焊料支架可以实现AlInAs/InGaAs选择性掺杂异质结构的均匀外延生长。在3英寸晶圆上，电子迁移率和薄片电子密度的变化在±1%以内。当阈值电压为-0.80 V时，在外延片上制备的hemt的阈值电压标准差为26 mV。所获得的均匀性对于大规模集成电路制造是可以接受的

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Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication

It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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