在不同界面层的玻璃基板上生长碳纳米管

Shang-Chou Chang, To-Sing Li, Tien-Chai Lin, Jian-Hua Lee
{"title":"在不同界面层的玻璃基板上生长碳纳米管","authors":"Shang-Chou Chang, To-Sing Li, Tien-Chai Lin, Jian-Hua Lee","doi":"10.1109/IMPACT.2009.5382244","DOIUrl":null,"url":null,"abstract":"Microwave plasma enhanced chemical vapor deposition (MPECVD) was applied in growing carbon nano tubes (CNTs) on sodium free glass with different interface layer materials. Surface morphology and field emission characteristics of as grown CNTs were measured. Three different materials: titanium(Ti), gold(Au) and indium tin oxide (ITO) thin films were prepared on glass first as the interface role between CNTs and glass. Nickel(Ni) films were sputtered on three different interface films and also direct on glass. After hydrogen plasma pretreatment on nickel films, CNTs were tried to grow on four kinds of glass combination: Ni/glass, Ni/ITO/glass, Ni/Au/glass and Ni/Ti/glass, three substrate temperatures: unheated, 300°C and 500 °C, with the mixture of methane and hydrogen microwave plasma. It was found CNTs can be grown with high CNTs density, high adhesion and 2.5V/ µ m turn on electric field corresponding to Ni/Ti/glass and 500 °C process condition. The same MPECVD system with same pretreatment and process gas can be used to grow CNTs on silicon substrate without extra substrate heating. It is proposed the electrical conductivity of substrate has strong influence on CNTs growth. The interface material like Ti can modify the electrical conductivity of the substrate surface.","PeriodicalId":6410,"journal":{"name":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","volume":"9 1","pages":"561-564"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carbon nano tubes grown on glass substrate with different interface layer\",\"authors\":\"Shang-Chou Chang, To-Sing Li, Tien-Chai Lin, Jian-Hua Lee\",\"doi\":\"10.1109/IMPACT.2009.5382244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Microwave plasma enhanced chemical vapor deposition (MPECVD) was applied in growing carbon nano tubes (CNTs) on sodium free glass with different interface layer materials. Surface morphology and field emission characteristics of as grown CNTs were measured. Three different materials: titanium(Ti), gold(Au) and indium tin oxide (ITO) thin films were prepared on glass first as the interface role between CNTs and glass. Nickel(Ni) films were sputtered on three different interface films and also direct on glass. After hydrogen plasma pretreatment on nickel films, CNTs were tried to grow on four kinds of glass combination: Ni/glass, Ni/ITO/glass, Ni/Au/glass and Ni/Ti/glass, three substrate temperatures: unheated, 300°C and 500 °C, with the mixture of methane and hydrogen microwave plasma. It was found CNTs can be grown with high CNTs density, high adhesion and 2.5V/ µ m turn on electric field corresponding to Ni/Ti/glass and 500 °C process condition. The same MPECVD system with same pretreatment and process gas can be used to grow CNTs on silicon substrate without extra substrate heating. It is proposed the electrical conductivity of substrate has strong influence on CNTs growth. The interface material like Ti can modify the electrical conductivity of the substrate surface.\",\"PeriodicalId\":6410,\"journal\":{\"name\":\"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference\",\"volume\":\"9 1\",\"pages\":\"561-564\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT.2009.5382244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2009.5382244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

采用微波等离子体增强化学气相沉积(MPECVD)技术在不同界面层材料的无钠玻璃上生长碳纳米管。测量了生长CNTs的表面形貌和场发射特性。首先在玻璃上制备了钛(Ti)、金(Au)和氧化铟锡(ITO)三种不同材料薄膜,作为碳纳米管与玻璃的界面作用。镍(Ni)薄膜溅射在三种不同的界面膜上,也直接溅射在玻璃上。在镍膜上进行氢等离子体预处理后,采用甲烷和氢气混合微波等离子体,在未加热、300℃和500℃三种衬底温度下,在Ni/玻璃、Ni/ITO/玻璃、Ni/Au/玻璃和Ni/Ti/玻璃四种玻璃组合上尝试生长CNTs。结果表明,在Ni/Ti/玻璃对应的2.5V/µm的电场和500℃的工艺条件下,可以生长出高碳纳米管密度、高附着力的CNTs。采用相同的预处理和工艺气体,相同的MPECVD系统可以在硅衬底上生长CNTs,而无需额外的衬底加热。研究表明,衬底电导率对碳纳米管的生长有重要影响。界面材料如Ti可以改变衬底表面的导电性。
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Carbon nano tubes grown on glass substrate with different interface layer
Microwave plasma enhanced chemical vapor deposition (MPECVD) was applied in growing carbon nano tubes (CNTs) on sodium free glass with different interface layer materials. Surface morphology and field emission characteristics of as grown CNTs were measured. Three different materials: titanium(Ti), gold(Au) and indium tin oxide (ITO) thin films were prepared on glass first as the interface role between CNTs and glass. Nickel(Ni) films were sputtered on three different interface films and also direct on glass. After hydrogen plasma pretreatment on nickel films, CNTs were tried to grow on four kinds of glass combination: Ni/glass, Ni/ITO/glass, Ni/Au/glass and Ni/Ti/glass, three substrate temperatures: unheated, 300°C and 500 °C, with the mixture of methane and hydrogen microwave plasma. It was found CNTs can be grown with high CNTs density, high adhesion and 2.5V/ µ m turn on electric field corresponding to Ni/Ti/glass and 500 °C process condition. The same MPECVD system with same pretreatment and process gas can be used to grow CNTs on silicon substrate without extra substrate heating. It is proposed the electrical conductivity of substrate has strong influence on CNTs growth. The interface material like Ti can modify the electrical conductivity of the substrate surface.
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