{"title":"SOI模具从器件到装配包的传热分析","authors":"S. Irving, Y. Liu, D. Connerny, T. Luk","doi":"10.1109/ESIME.2006.1643947","DOIUrl":null,"url":null,"abstract":"The operational characteristics of silicon devices are strongly influenced by device temperature. For SOI devices power dissipation is a much more significant challenge than for non-SOI devices. As a result the thermal design of SOI devices is vital to proper product performance. To maximize the engineering understanding of SOI circuits we develop a method to examine the combined system of SOI device and the package by finite element analysis. These results are compared to results obtained from an equivalent electrical model. The use of on die structures as an aide to heat dissipation is explored","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"13 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"SOI Die Heat Transfer Analysis from Device to Assembly Package\",\"authors\":\"S. Irving, Y. Liu, D. Connerny, T. Luk\",\"doi\":\"10.1109/ESIME.2006.1643947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The operational characteristics of silicon devices are strongly influenced by device temperature. For SOI devices power dissipation is a much more significant challenge than for non-SOI devices. As a result the thermal design of SOI devices is vital to proper product performance. To maximize the engineering understanding of SOI circuits we develop a method to examine the combined system of SOI device and the package by finite element analysis. These results are compared to results obtained from an equivalent electrical model. The use of on die structures as an aide to heat dissipation is explored\",\"PeriodicalId\":60796,\"journal\":{\"name\":\"微纳电子与智能制造\",\"volume\":\"13 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"微纳电子与智能制造\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2006.1643947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SOI Die Heat Transfer Analysis from Device to Assembly Package
The operational characteristics of silicon devices are strongly influenced by device temperature. For SOI devices power dissipation is a much more significant challenge than for non-SOI devices. As a result the thermal design of SOI devices is vital to proper product performance. To maximize the engineering understanding of SOI circuits we develop a method to examine the combined system of SOI device and the package by finite element analysis. These results are compared to results obtained from an equivalent electrical model. The use of on die structures as an aide to heat dissipation is explored