{"title":"基于6500V非对称SiC NPNP晶闸管的电流开关性能评价与表征","authors":"A. De, S. Bhattacharya, R. Singh","doi":"10.1109/WIPDA.2015.7369324","DOIUrl":null,"url":null,"abstract":"The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"34 1","pages":"10-15"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch\",\"authors\":\"A. De, S. Bhattacharya, R. Singh\",\"doi\":\"10.1109/WIPDA.2015.7369324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.\",\"PeriodicalId\":6538,\"journal\":{\"name\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"34 1\",\"pages\":\"10-15\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2015.7369324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch
The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
