真空封装微结构的高压约束

Chester G. Wilson, Y. Gianchandani, A. Wendt
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引用次数: 6

摘要

为了了解真空封装微结构中高场击穿的细节,采用了一系列实验来确定微放电的特性。结果支持基于大规模放电的传统假设的重新解释。当使用平面微电极时,传统意义上的Paschen曲线不适用:击穿电压在1-20 torr范围内对压力相对不敏感,在空气环境下保持在/spl sim/400 V。然而,放电电流的空间分布确实随压力和功率的变化而变化。大的电压梯度被支持在发光区域,这是限制在阴极正上方几毫米,并在其侧面边缘的几百微米内。其量级范围为100,000-500,000 V/m,工作压力范围为1.2-6 torr。基于这些结果,为高压微系统的设计提供了指导。
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High-voltage constraints for vacuum packaged microstructures
In order to understand the details of high-field breakdown in microstructures that are vacuum packaged, a series of experiments are used to determine characteristics of microdischarges. The results support a reinterpretation of conventional assumptions based upon large scale discharges. When planar microelectrodes are used, Paschen's curve is not applicable in the traditional sense: the breakdown voltage is relatively insensitive to pressure in the 1-20 torr range, and remains at /spl sim/400 V for air ambient. However, the spatial distribution of discharge current does vary with the pressure and the power. Large voltage gradients are supported in the glow region which is confined to a few millimeters directly above the cathode, and within a few hundred microns of its lateral edge. Their magnitudes range from 100,000-500,000 V/m for operating pressures ranging from 1.2-6 torr. Based on these results, guidelines are provided for the design of high-voltage microsystems.
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