自旋波逻辑电路的系统级评估和面积评估

O. Zografos, P. Raghavan, L. Amarù, B. Sorée, R. Lauwereins, I. Radu, D. Verkest, A. Thean
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引用次数: 10

摘要

自旋波器件(SWDs)是CMOS领域以外的电子器件的有前途的候选器件。与传统的基于电荷的技术相比,SWDs依靠磁化的传播振荡作为信息载体。由于这些器件固有的波计算能力,多数门的实现需要较少的物理资源。紧凑的多数门比标准的NAND/NOR门更具表现力,进一步推动了swd相对于CMOS的预期优势。在本文中,我们提出了一个基于swd的逻辑电路的现实设计框架,考虑到新技术的局限性和优势。我们使用多数逻辑合成工具来充分利用SWD功能。在实验中,我们主要关注估计的面积。我们考虑了几个算术密集型基准,并将它们的SWD面积与三个最先进的CMOS节点进行了比较。我们表明,与10nm CMOS技术相比,面积缩小11.3倍是可能的。
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System-level assessment and area evaluation of Spin Wave logic circuits
Spin Wave Devices (SWDs) are promising candidates for scaling electronics beyond the domain of CMOS. In contrast to traditional charge-based technologies, SWDs rely on propagating oscillation of magnetization as information carrier. Thanks to the intrinsic wave computation capability of these devices, the majority gate is implemented with low physical re-sources. Being more expressive than standard NAND/NOR gates, the compact majority gate pushes further the expected benefits of SWDs over CMOS. In this paper, we present a realistic design framework for SWD-based logic circuits, accounting for both limitations and advantages deriving from the new technology. We use a majority logic synthesis tool to fully exploit the SWD functionality. In the experiments, we focus on the estimated area. We consider several arithmetic-intensive benchmarks, and compare their SWD area with three state-of-the-art CMOS nodes. We show that an area reduction up to 11.3x is possible, as compared to a 10nm CMOS technology.
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