{"title":"碳化硅中多型分布的x射线形貌观察","authors":"W. J. Takei, M. Francombe","doi":"10.1088/0508-3443/18/11/312","DOIUrl":null,"url":null,"abstract":"An x-ray topographic technique has been used for the study of the spatial distribution of polytypes in silicon carbide crystals. The results for a typical mixed crystal indicate that analyses based upon the more conventional optical and x-ray Laue studies may be subject to misinterpretation. The topographic method clarifies the significance of the boundaries which are observed optically.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"53 58 1","pages":"1589"},"PeriodicalIF":0.0000,"publicationDate":"1967-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"X-ray topographic observation of polytype distributions in silicon carbide\",\"authors\":\"W. J. Takei, M. Francombe\",\"doi\":\"10.1088/0508-3443/18/11/312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An x-ray topographic technique has been used for the study of the spatial distribution of polytypes in silicon carbide crystals. The results for a typical mixed crystal indicate that analyses based upon the more conventional optical and x-ray Laue studies may be subject to misinterpretation. The topographic method clarifies the significance of the boundaries which are observed optically.\",\"PeriodicalId\":9350,\"journal\":{\"name\":\"British Journal of Applied Physics\",\"volume\":\"53 58 1\",\"pages\":\"1589\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1967-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"British Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0508-3443/18/11/312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/11/312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
X-ray topographic observation of polytype distributions in silicon carbide
An x-ray topographic technique has been used for the study of the spatial distribution of polytypes in silicon carbide crystals. The results for a typical mixed crystal indicate that analyses based upon the more conventional optical and x-ray Laue studies may be subject to misinterpretation. The topographic method clarifies the significance of the boundaries which are observed optically.
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