叠锥GaN纳米棒的结构表征与场发射

Chun Li, Yang Huang, Y. Bando, D. Golberg
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引用次数: 0

摘要

采用金属催化化学气相沉积法制备了直径为100 ~ 400 nm、长度为数十微米的叠锥状GaN纳米棒。叠锥GaN纳米棒具有主导的六方晶体结构,生长方向沿[0001]。TEM分析表明,顶尖为六方相和立方相的双晶结构,而茎尖和侧尖为单六方相。室温场发射测试表明,在0.1µA/cm2下,导通场为8.9 V/µm,在70µm真空间隙下,14.2 V/µm电流密度约为0.1 mA/cm2。场增强因子β和阳极阴极间隙d遵循一个通用方程。合成方法简单,发射性能好,在真空微电子领域具有广阔的应用前景。
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Structural characterization and field emission of stacked-cone GaN nanorods
The stacked-cone morphology GaN nanorods with diameters of 100–400 nm and lengths of tens of micrometers were synthesized by metal-catalyzed chemical vapor deposition. The stacked-cone GaN nanorods possessed dominated hexagonal crystalline structure with growth direction along [0001]. TEM analysis showed that the top tip had a bicrystal structure of hexagonal and cubic phases, while the stem and side tip had single hexagonal phase. Room temperature field emission test showed the turn-on field was 8.9 V/µm at 0.1 µA/cm2 and current density was about 0.1 mA/cm2 at 14.2 V/µm at a vacuum gap of 70 µm. The field enhancement factor β and anode-cathode gap d follows a universal equation. The simple synthesis method and good emission properties imply their potential application in vacuum microelectronic.
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