{"title":"常压等离子体射流原位沉积Ar/H2等离子体处理In-Ga-Zn-O tft的研究","authors":"Kow-Ming Chang, Bo-Wen Huang, Chien-Hung Wu, Hsin-Ying Chen, Y. Zheng, Ming-Chuan Lee, Yu-Xin Zhang, Chuang-Ju Lin, Yu-Hsuan Cheng, Shui-Jinn Wang, Jui-Mei Hsu, Yuli Lin","doi":"10.1109/NANO.2016.7751471","DOIUrl":null,"url":null,"abstract":"Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H<sub>2</sub> plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H<sub>2</sub> plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm<sup>2</sup>/V·S, V<sub>T</sub> of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I<sub>on</sub>/I<sub>off</sub> of 5.34×10<sup>7</sup>. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"405-407"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet\",\"authors\":\"Kow-Ming Chang, Bo-Wen Huang, Chien-Hung Wu, Hsin-Ying Chen, Y. Zheng, Ming-Chuan Lee, Yu-Xin Zhang, Chuang-Ju Lin, Yu-Hsuan Cheng, Shui-Jinn Wang, Jui-Mei Hsu, Yuli Lin\",\"doi\":\"10.1109/NANO.2016.7751471\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H<sub>2</sub> plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H<sub>2</sub> plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm<sup>2</sup>/V·S, V<sub>T</sub> of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I<sub>on</sub>/I<sub>off</sub> of 5.34×10<sup>7</sup>. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.\",\"PeriodicalId\":6646,\"journal\":{\"name\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"1 1\",\"pages\":\"405-407\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2016.7751471\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm2/V·S, VT of 1.11 V, lower subthreshold swing of 93 mV/decade, higher Ion/Ioff of 5.34×107. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.
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