STUDY OF NOVEL CHANNEL MATERIALS USING III-V COMPOUNDS WITH VARIOUS GATE DIELECTRICS

The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have studied a ballistic nanoscale MOSFET using simulation approach by replacing silicon in the channel by III-V compounds. The channel materials considered are silicon (Si), Gallium arsenide (GaAs), Indium arsenide (InAs), Indium Phosphide (InP) and Indium Antimonide (InSb). The device metrics considered at the nanometer scale are subthreshold swing, Drain induced barrier lowering, on and off current, carrier injection velocity and switching speed. These channel materials have been studied using various dielectric constants. It has been observed that Indium Antimonide (InSb) has higher on current, higher transconductance, idealistic subthreshold swing, higher output conductance, higher carrier injection velocity and comparable voltage gain compared to Silicon, thus, making InSb as a possible candidate to be used as channel material in future nanoscale devices.