In this paper we introduce an approach to increase density of field-effect transistors framework a conventional folded-cascode operational amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
{"title":"On Optimization of Manufacturing of a Conventional Folded Cascode Operational Amplifier Based on Heterostructures to Increase Density of their Elements. Influence of Missmatch Induced Stress and Porosity of Materials on Technological Process","authors":"P. E.L","doi":"10.5121/IJOE.2018.7201","DOIUrl":"https://doi.org/10.5121/IJOE.2018.7201","url":null,"abstract":"In this paper we introduce an approach to increase density of field-effect transistors framework a conventional folded-cascode operational amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"91 1","pages":"01-19"},"PeriodicalIF":0.0,"publicationDate":"2018-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80551136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we introduce an approach to increase density of field-effect transistors framework a CMOS power amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
{"title":"On Optimization of Manufacturing of a CMOS Power Amplifier to Increase Density of Elements with Account Miss-Match Induced Stress and Porosity of Materials","authors":"P. E.L","doi":"10.5121/IJOE.2018.7101","DOIUrl":"https://doi.org/10.5121/IJOE.2018.7101","url":null,"abstract":"In this paper we introduce an approach to increase density of field-effect transistors framework a CMOS power amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"75 1","pages":"01-15"},"PeriodicalIF":0.0,"publicationDate":"2018-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76118347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we introduce an analytical approach to calculate the distribution of velocity of flow of the gas mixture, the concentration distributions of the growth component and temperature fields in the zone of deposition of semiconductor layers in chemical vapor deposition using a reaction chamber with a rotating disk substrate holder. The results of analysis of the temperature and concentration fields in the reduced and atmospheric conditions (~ 0.1 atm.) pressure in the reaction chamber obtained based on the proposed theoretical models.
{"title":"On Approach to Analyze Non-Linear Model of Mass and Heat Transport During Gas Phase Epitaxy - A Possibility to Improve Properties of Films","authors":"P. E.L, Bulaeva E.A","doi":"10.5121/IJOE.2017.6401","DOIUrl":"https://doi.org/10.5121/IJOE.2017.6401","url":null,"abstract":"In this paper we introduce an analytical approach to calculate the distribution of velocity of flow of the gas mixture, the concentration distributions of the growth component and temperature fields in the zone of deposition of semiconductor layers in chemical vapor deposition using a reaction chamber with a rotating disk substrate holder. The results of analysis of the temperature and concentration fields in the reduced and atmospheric conditions (~ 0.1 atm.) pressure in the reaction chamber obtained based on the proposed theoretical models.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"111 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2017-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79209584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we introduce an approach to optimize technological process of manufacturing of heterotransistors with two sources to decrease their dimensions. Framework the approach we consider a heterostructure with specific configuration. After manufacturing of the heterostructure we consider doping of several areas of the heterostructure by diffusion or ion implantation. The doping was finished by optimized annealing of dopant and/or radiation defects. We introduce an analytical approach for prognosis of mass transport to obtain the required results.
{"title":"On Approach to Optimize Manufacturing of a Transistors with Two Sources to Decrease their Dimensions","authors":"P. E.L","doi":"10.5121/IJOE.2017.6301","DOIUrl":"https://doi.org/10.5121/IJOE.2017.6301","url":null,"abstract":"In this paper we introduce an approach to optimize technological process of manufacturing of heterotransistors with two sources to decrease their dimensions. Framework the approach we consider a heterostructure with specific configuration. After manufacturing of the heterostructure we consider doping of several areas of the heterostructure by diffusion or ion implantation. The doping was finished by optimized annealing of dopant and/or radiation defects. We introduce an analytical approach for prognosis of mass transport to obtain the required results.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"55 1","pages":"01-11"},"PeriodicalIF":0.0,"publicationDate":"2017-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86783670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier due to decreasing of their dimensions. The considered approach based on doping of required areas of heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution of radiation defects (after implantation of ions of dopant) for optimization of the above annealing have been done by using recently introduced analytical approach. The approach gives a possibility to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces between layers of the heterostructure with account nonlinearity of these transports and variation in time of their parameters.
{"title":"On Optimization of Manufacturing of an Amplifier to Increase Density of Bipolar Transistor Framework the Amplifier","authors":"E. Pankratov, E. Bulaeva","doi":"10.5121/IJOE.2017.6201","DOIUrl":"https://doi.org/10.5121/IJOE.2017.6201","url":null,"abstract":"In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier due to decreasing of their dimensions. The considered approach based on doping of required areas of heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution of radiation defects (after implantation of ions of dopant) for optimization of the above annealing have been done by using recently introduced analytical approach. The approach gives a possibility to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces between layers of the heterostructure with account nonlinearity of these transports and variation in time of their parameters.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"21 1","pages":"1-18"},"PeriodicalIF":0.0,"publicationDate":"2017-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.5121/IJOE.2017.6201","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72478579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We analyzed nonlinear model with varying in space and time coefficients of growth of epitaxial layers from gas phase in a vertical reactor with account native convection. We formulate several conditions to increase homogeneity of epitaxial layers with varying of technological process parameters.
{"title":"Analysis of Possibility of Growth of Several Epitaxial Layers Simultaneously In Gas Phases Framework One Technological Process. On Possibility to Change Properties of Epitaxial Layers","authors":"P. E.L, Bulaeva E.A","doi":"10.5121/IJOE.2017.6101","DOIUrl":"https://doi.org/10.5121/IJOE.2017.6101","url":null,"abstract":"We analyzed nonlinear model with varying in space and time coefficients of growth of epitaxial layers from gas phase in a vertical reactor with account native convection. We formulate several conditions to increase homogeneity of epitaxial layers with varying of technological process parameters.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"92 6 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80789559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of Manufacturing of Voltage Restore to Increase Density of Elements of the Circuit","authors":"E. Pankratov, E. Bulaeva","doi":"10.5121/IJOE.2016.5401","DOIUrl":"https://doi.org/10.5121/IJOE.2016.5401","url":null,"abstract":"","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"66 1","pages":"1-19"},"PeriodicalIF":0.0,"publicationDate":"2016-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74745148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper shows that nickel nanowires of length 11 µm and diameters 800 and 15nm were grown within the pores of nuclear track polycarbonate membrane by electrodepositing nickel. Surface morphology and crystallographic structure of the deposited nanowires was investigated using SEM, TEM and XRD respectively. It is found that low current density gives good result, while high current density leads to the formation of curled nanowires. Fabricated nanowires were further investigated for electrical properties and found that nanowires obey ohm’s law. Through structural characterization it has been observed that the fabricated nanowires posses FCC lattice structure.
{"title":"FABRICATION AND CHARACTERIZATION OF NICKEL NANOWIRES","authors":"R. Kaur","doi":"10.5121/ijoe.2014.3401","DOIUrl":"https://doi.org/10.5121/ijoe.2014.3401","url":null,"abstract":"This paper shows that nickel nanowires of length 11 µm and diameters 800 and 15nm were grown within the pores of nuclear track polycarbonate membrane by electrodepositing nickel. Surface morphology and crystallographic structure of the deposited nanowires was investigated using SEM, TEM and XRD respectively. It is found that low current density gives good result, while high current density leads to the formation of curled nanowires. Fabricated nanowires were further investigated for electrical properties and found that nanowires obey ohm’s law. Through structural characterization it has been observed that the fabricated nanowires posses FCC lattice structure.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"30 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2014-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75813945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Remote-sensing (RS) images were extracted by using object-oriented remote sensing classification methods. This study combines RS and Geographic Information System to conduct multilevel segmentation and classify of the remote sensing image of Manas watershed. The e-Cognition system was selected to define the knowledge base following the classification system. The results show that the overall nicety of grading can reach 97.37% and that the Kappa coefficient is 0.9706. These results show that land use can be described and extracted by using high spatial resolution remote-sensing images.
{"title":"Surface Feature Extraction on the Basis of Object-oriented Remote Sensing Classification Methods in Manas River Basin","authors":"Wang Ling, Su Jian-an, Guo Peng","doi":"10.3991/IJOE.V10I6.4021","DOIUrl":"https://doi.org/10.3991/IJOE.V10I6.4021","url":null,"abstract":"Remote-sensing (RS) images were extracted by using object-oriented remote sensing classification methods. This study combines RS and Geographic Information System to conduct multilevel segmentation and classify of the remote sensing image of Manas watershed. The e-Cognition system was selected to define the knowledge base following the classification system. The results show that the overall nicety of grading can reach 97.37% and that the Kappa coefficient is 0.9706. These results show that land use can be described and extracted by using high spatial resolution remote-sensing images.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"93 1","pages":"63-67"},"PeriodicalIF":0.0,"publicationDate":"2014-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72856938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The entire wind farm is regarded as a large-capacity wind turbine for modeling double-fed wind farm. The influence of flow field characteristics in the wind farm has been ignored. In order to reflect the influence in double-fed wind farm equivalent modeling, an equivalent modeling method of double-fed wind farm based on the flow field characteristics has been proposed. A calculation model of the double-fed wind farm flow field has been built considering the influence of terrain and wake. The wind speed was calculated at each wind turbine installed point based on the flow field calculation model, and using the wind speed as the input wind speed for each wind turbine, the dynamic characteristics of the wind farm production process has been studied. The simulation analysis has been done for the proposed modeling method, and the simulation results show that the proposed modeling method can reflects the dynamic characteristics of the wind farm production process more accurately.
{"title":"Equivalent Modeling of Double-fed Wind Farm Based on Flow Field Characteristics","authors":"Bo Gu, Hu Hao, Huang Hui, Li Xinyu","doi":"10.3991/ijoe.v10i6.3967","DOIUrl":"https://doi.org/10.3991/ijoe.v10i6.3967","url":null,"abstract":"The entire wind farm is regarded as a large-capacity wind turbine for modeling double-fed wind farm. The influence of flow field characteristics in the wind farm has been ignored. In order to reflect the influence in double-fed wind farm equivalent modeling, an equivalent modeling method of double-fed wind farm based on the flow field characteristics has been proposed. A calculation model of the double-fed wind farm flow field has been built considering the influence of terrain and wake. The wind speed was calculated at each wind turbine installed point based on the flow field calculation model, and using the wind speed as the input wind speed for each wind turbine, the dynamic characteristics of the wind farm production process has been studied. The simulation analysis has been done for the proposed modeling method, and the simulation results show that the proposed modeling method can reflects the dynamic characteristics of the wind farm production process more accurately.","PeriodicalId":14375,"journal":{"name":"International Journal of Online Engineering","volume":"93 1","pages":"25-29"},"PeriodicalIF":0.0,"publicationDate":"2014-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77209634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：