用于晶圆级封装的光子脱粘

V. Turkani, V. Akhavan, K. Schroder, Xiao Liu, Luke Prenger, Xavier Martinez
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引用次数: 1

摘要

临时粘接和脱粘(TB/DB)工艺已成为晶圆级封装技术中有前途的解决方案。这些工艺为晶圆减薄和随后的背面加工提供了一条途径,这对于使用3D通硅通孔(tsv)和扇形圆片级封装等技术实现异质集成至关重要。这些对于整体设备小型化和提高性能至关重要。本文提出了一种新的光子脱键(PDB)方法和相应的键合材料。PDB通过克服与传统脱粘方法相关的许多缺点来增强TB/DB过程。PDB利用闪光灯发出的脉冲宽带光(200nm - 1100nm)将玻璃作为载体晶圆对进行脱粘。这些闪光灯在短时间间隔(~100 μs)内产生高强度光脉冲(高达45 kW/cm2),以促进脱粘。通过成功地从玻璃载体上剥离薄化(<70 μm)硅片,证明了PDB在TB/DB工艺中的可行性。对薄晶片和载体的脱粘后清洗进行了评估。由于每个闪光灯具有均匀的大面积照明(75 mm x 150 mm),并且能够连接灯以增加PDB工具的照明面积,PDB方法为晶圆级和面板级封装技术提供了高通量和低成本的去粘接解决方案。
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Photonic Debonding for Wafer-Level Packaging
Temporary bonding and debonding (TB/DB) processes have emerged as promising solutions in wafer-level packaging technology. These processes offer a pathway to wafer thinning and subsequent backside processing, which are crucial in enabling heterogenous integration using technologies such as 3D through-silicon-vias (TSVs) and fan-out wafer-level packaging. These are critical for overall device miniaturization and increased performance. In this work, a novel photonic debonding (PDB) method and the corresponding bonding material are presented. PDB enhances the TB/DB process by overcoming many of the disadvantages associated with traditional debonding methods. PDB uses pulsed broadband light (200 nm – 1100 nm) from flashlamps to debond temporarily bonded wafer pairs with glass as the carrier wafer. These flashlamps generate high-intensity pulses of light (up to 45 kW/cm2) over short time intervals (~100 μs) to facilitate the debonding. Feasibility of the PDB in the TB/DB process is demonstrated by successfully debonding thinned (<70 μm) silicon wafers from glass carriers. Post-debond cleaning of the thinned wafers and carriers is evaluated. With uniform, large-area illumination (75 mm x 150 mm) per flashlamp and with the ability to concatenate lamps to increase the illumination area of the PDB tool, the PDB method offers a high-throughput and low-cost debonding solution for both wafer-level and panel-level packaging technologies.
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