Khushbu Mehta, D. Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, M. Kaur, Prem Kumar, K. Rangra
{"title":"减少介电充电的射频MEMS电容开关","authors":"Khushbu Mehta, D. Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, M. Kaur, Prem Kumar, K. Rangra","doi":"10.1117/1.JMM.17.4.045001","DOIUrl":null,"url":null,"abstract":"Abstract. The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20 V and pull-up voltage is 17 V with a switching time of 78 μs. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"13 1","pages":"045001 - 045001"},"PeriodicalIF":1.5000,"publicationDate":"2018-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reduced dielectric charging RF MEMS capacitive switch\",\"authors\":\"Khushbu Mehta, D. Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, M. Kaur, Prem Kumar, K. Rangra\",\"doi\":\"10.1117/1.JMM.17.4.045001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract. The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20 V and pull-up voltage is 17 V with a switching time of 78 μs. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles.\",\"PeriodicalId\":16522,\"journal\":{\"name\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"volume\":\"13 1\",\"pages\":\"045001 - 045001\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2018-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1117/1.JMM.17.4.045001\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.17.4.045001","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Abstract. The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20 V and pull-up voltage is 17 V with a switching time of 78 μs. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles.