微动力电池电流传感器,在−40 ~ +85℃范围内,误差为±0.03% (3σ)

S. H. Shalmany, D. Draxelmayr, K. Makinwa
{"title":"微动力电池电流传感器,在−40 ~ +85℃范围内,误差为±0.03% (3σ)","authors":"S. H. Shalmany, D. Draxelmayr, K. Makinwa","doi":"10.1109/ISSCC.2013.6487781","DOIUrl":null,"url":null,"abstract":"This paper presents a micropower current-sensing system (CSS) for battery monitoring, which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference (BGR). For currents ranging from 0 to 1A over the industrial temperature range (-40°C to +85°C), it exhibits 10μA offset and ±0.03% (3σ) gain error, which is a 3× improvement on systems with off-chip external references [1,2]. This level of accuracy is achieved by the use of dynamic error-correction techniques, digital temperature compensation, and an on-chip dynamic BGR, whose spread is corrected by a single room-temperature trim.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":"1 1","pages":"386-387"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"A micropower battery current sensor with ±0.03% (3σ) inaccuracy from −40 to +85°C\",\"authors\":\"S. H. Shalmany, D. Draxelmayr, K. Makinwa\",\"doi\":\"10.1109/ISSCC.2013.6487781\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a micropower current-sensing system (CSS) for battery monitoring, which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference (BGR). For currents ranging from 0 to 1A over the industrial temperature range (-40°C to +85°C), it exhibits 10μA offset and ±0.03% (3σ) gain error, which is a 3× improvement on systems with off-chip external references [1,2]. This level of accuracy is achieved by the use of dynamic error-correction techniques, digital temperature compensation, and an on-chip dynamic BGR, whose spread is corrected by a single room-temperature trim.\",\"PeriodicalId\":6378,\"journal\":{\"name\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"volume\":\"1 1\",\"pages\":\"386-387\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2013.6487781\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487781","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33

摘要

本文提出了一种用于电池监测的微功率电流传感系统(CSS),该系统由一个校准分流电阻、一个ΔΣ ADC和一个动态带隙基准(BGR)组成。在工业温度范围(-40°C至+85°C)内,电流范围从0到1A,它具有10μA偏置和±0.03% (3σ)增益误差,这是具有片外外部参考的系统的3倍改进[1,2]。这种精度水平是通过使用动态纠错技术,数字温度补偿和片上动态BGR来实现的,其传播通过单个室温修剪来纠正。
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A micropower battery current sensor with ±0.03% (3σ) inaccuracy from −40 to +85°C
This paper presents a micropower current-sensing system (CSS) for battery monitoring, which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference (BGR). For currents ranging from 0 to 1A over the industrial temperature range (-40°C to +85°C), it exhibits 10μA offset and ±0.03% (3σ) gain error, which is a 3× improvement on systems with off-chip external references [1,2]. This level of accuracy is achieved by the use of dynamic error-correction techniques, digital temperature compensation, and an on-chip dynamic BGR, whose spread is corrected by a single room-temperature trim.
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