S. Kimura, H. Yoshida, H. Miyazaki, Takuya Fujimoto, A. Ogino
{"title":"氮化镓阴极热离子发射和转换特性的表面极性依赖性","authors":"S. Kimura, H. Yoshida, H. Miyazaki, Takuya Fujimoto, A. Ogino","doi":"10.1116/6.0000710","DOIUrl":null,"url":null,"abstract":"We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18 mA at an applied anode voltage of 30 V at 500 °C. This TE current was markedly higher than that of a sample with Ga-polarity, which had a corresponding TE current of 0.063 mA. We consider the N-polarity with spontaneous polarization to be the cause of the increase in electron density at the Cs/n-GaN interface. TE current was also detected from both samples with Ga- and N-polarity even when the applied anode voltage was 0 V or lower, indicating the presence of thermionic conversion characteristics. From the viewpoint of a thermionic converter, the electromotive force for TE was 0.12 V higher when using the N-polarity n-GaN cathode compared with the Ga-polarity cathode. The short-circuit currents at 500 °C were 4.8 and 0.97 μA for the sample with N-polarity and the one with Ga-polarity, respectively.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":"29 1","pages":"014201"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes\",\"authors\":\"S. Kimura, H. Yoshida, H. Miyazaki, Takuya Fujimoto, A. Ogino\",\"doi\":\"10.1116/6.0000710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18 mA at an applied anode voltage of 30 V at 500 °C. This TE current was markedly higher than that of a sample with Ga-polarity, which had a corresponding TE current of 0.063 mA. We consider the N-polarity with spontaneous polarization to be the cause of the increase in electron density at the Cs/n-GaN interface. TE current was also detected from both samples with Ga- and N-polarity even when the applied anode voltage was 0 V or lower, indicating the presence of thermionic conversion characteristics. From the viewpoint of a thermionic converter, the electromotive force for TE was 0.12 V higher when using the N-polarity n-GaN cathode compared with the Ga-polarity cathode. The short-circuit currents at 500 °C were 4.8 and 0.97 μA for the sample with N-polarity and the one with Ga-polarity, respectively.\",\"PeriodicalId\":17652,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena\",\"volume\":\"29 1\",\"pages\":\"014201\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0000710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0000710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes
We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18 mA at an applied anode voltage of 30 V at 500 °C. This TE current was markedly higher than that of a sample with Ga-polarity, which had a corresponding TE current of 0.063 mA. We consider the N-polarity with spontaneous polarization to be the cause of the increase in electron density at the Cs/n-GaN interface. TE current was also detected from both samples with Ga- and N-polarity even when the applied anode voltage was 0 V or lower, indicating the presence of thermionic conversion characteristics. From the viewpoint of a thermionic converter, the electromotive force for TE was 0.12 V higher when using the N-polarity n-GaN cathode compared with the Ga-polarity cathode. The short-circuit currents at 500 °C were 4.8 and 0.97 μA for the sample with N-polarity and the one with Ga-polarity, respectively.