Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling

Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.