功率循环载荷作用下Cu-Sn瞬态液相烧结(TLPS)接头可靠性及失效分析

S. A. Moeini, Hannes Greve, F. McCluskey
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引用次数: 12

摘要

随着电力电子器件应用温度的不断提高,需要能够在高温下可靠工作的新型封装技术。在这些新的封装技术中,最关键的是需要一种新的互连,因为目前在电子产品中使用的含铅焊料的应用被禁止。本文研究了一种低加工、高应用温度的潜在互连技术(TLPS)在功率循环加载条件下的性能。本研究设计并组装了与电源套件相容的测试装置。该测试装置循环并连续监测由市售功率二极管、TLPS接头和三种基板制成的功率封装的温度。设备在恒流条件下循环直至失效。故障判据定义为电源设备最高温度过高(> 30%)或设备完全电气故障。对失效试样进行了破坏性分析,以确定失效模式和机理。使用光学显微镜、扫描电子显微镜(SEM)和能量色散光谱(EDS)进行全面的失效分析。结果表明,Cu-Sn TLPS接头的刚度会导致半导体器件的断裂。失效模式以二极管失效(短路)为主,热机械载荷作用下器件断裂为失效机制。最后,对不同衬底对可靠性的影响进行了研究和比较。
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Reliability and failure analysis of Cu-Sn transient liquid phase sintered (TLPS) joints under power cycling loads
The continuous increase in application temperatures of power electronic devices demands new packaging technologies capable of working reliably at high temperatures. Most critical among these new packaging technologies is the need for a new kind of interconnection due to the expanding ban on application of currently used lead containing solders in electronics. In this paper, the performance of a potential interconnect technology (TLPS) with low processing and high application temperatures is investigated under power cycling loading conditions. A test setup compatible with power packages was designed and assembled for this study. This test setup cycles and continuously monitors the temperature of power packages fabricated from a commercially available power diode, TLPS joints, and three types of substrates. Devices are cycled under constant current condition until failure. The failure criterion is defined as either an excessive (> 30%) increase in the maximum temperature of the power device or complete electrical failure of the device. The failed samples were destructively analyzed to identify failure modes and mechanisms. Optical Microscopy, Scanning Electron Microscopy (SEM), and Energy Dispersive Spectrometry (EDS) were used to perform a comprehensive failure analysis. The results show that the stiffness of Cu-Sn TLPS joints can result in fracture of the semiconductor device. The prevalent failure mode was diode failure (short-circuit) and fracture of the device under thermo-mechanical loading was identified as the failure mechanism. Finally, the reliability effects of using different substrates were investigated and compared.
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