{"title":"二极管的VHDL-AMS紧凑建模包括反向恢复","authors":"L. Coyitangiye, R. Grisel","doi":"10.1109/ESIME.2006.1643952","DOIUrl":null,"url":null,"abstract":"A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery\",\"authors\":\"L. Coyitangiye, R. Grisel\",\"doi\":\"10.1109/ESIME.2006.1643952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements\",\"PeriodicalId\":60796,\"journal\":{\"name\":\"微纳电子与智能制造\",\"volume\":\"61 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"微纳电子与智能制造\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2006.1643952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery
A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
