{"title":"量子晶体管的高级生长/处理","authors":"K. Furuya, Y. Miyamoto","doi":"10.1109/ICIPRM.1991.147447","DOIUrl":null,"url":null,"abstract":"The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"3 1","pages":"596-601"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced growth/processing for quantum transistors\",\"authors\":\"K. Furuya, Y. Miyamoto\",\"doi\":\"10.1109/ICIPRM.1991.147447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"3 1\",\"pages\":\"596-601\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced growth/processing for quantum transistors
The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed.<>
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