O2等离子体处理C-TiO2薄膜表面性能变化的研究

K. Lee, Sang-Hun Nam, H. Seo, Sang Duck Lee, Y. D. Kim, J. Boo
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摘要

在之前的工作中,我们报道了使用四异丙醇钛(TTIP)作为单一前驱体,在没有任何载体或鼓泡气体的情况下,可以成功地在Ta衬底上生长TiO2纳米棒。同时,采用MOCVD方法在玻璃衬底上生长出柱状结构的C掺杂TiO2。为了改变C-TiO2的表面性能,采用O2等离子体处理生长的柱状结构C-TiO2。经过氧等离子体处理后,生长的柱状结构C-TiO2的表面性能由疏水表面转变为超亲水表面。采用扫描电镜(SEM)、x射线衍射(XRD)、x射线光电子能谱(XPS)、傅里叶变换红外光谱(FT-IR)和接触角分析仪等方法对其机理进行了分析。
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Study on the changes of surface property of grown C-TiO2 films by O2 plasma treatment
In the previous work, we reported that TiO2 nanorods could be successfully grown on Ta substrates using titanium tetra isopropoxide (TTIP) as a single precursor without any carriers or bubbling gases. In the mean time, columnar-structured C doped TiO2 was grown on glass substrates by MOCVD method. For change of surface properties, grown columnar-structured C-TiO2 was treated by O2 plasma. After O2 plasma treatment, the surface property of grown columnar-structured C-TiO2 changed from hydrophobic surface to super hydrophilic surface. For determination of this mechanism, scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), FT-IR spectroscopy, and contact angle analyzer were employed.
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