高可靠性应用中的细间距铜柱倒装芯片

C. Farnum, K. Rahim
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引用次数: 0

摘要

为了满足对更小、性能更高、成本更低的天线的需求,大多数下一代架构要求更高的集成电路芯片集成度。与传统封装配置相比,先进的芯片封装技术,如2.5D和3D,提供更大的芯片兼容性和更低的功耗。鉴于这些优势,采用先进的封装是不可避免的。在先进封装中,铜柱互连是一项关键的使能技术,也是下一个合乎逻辑的步骤。该技术具有多种优势,包括提高电迁移电阻,改善电导率和导热性,简化凹凸下金属化(UBM),以及更高的I/O(输入/输出)密度。铜柱的细间距有助于该技术取代焊接凸点技术,后者的最低间距约为40微米。更细的间距允许更高的I/O计数,从而提高性能。在这项工作中,成功地演示了在高密度中间体上组装超薄MMIC(单片微波集成电路)GaN(氮化镓)细间距铜柱倒装芯片组件。采用150μm间距的铜柱倒装芯片,对有机PCB(印刷电路板)和硅中间层的组装工艺进行了评估,并对ENIG(化学镍浸金)和共晶锡铅焊垫表面进行了评估。对于2D/2.5D/3D组装工艺开发,使用标准的内部拾取和放置工具,然后进行大量焊料回流,最后进行下填充以进行可靠性测试。互连鲁棒性是由模具拉强度,焊剂冲压调查和截面决定的。完成了GaN铜柱倒装芯片2D组装的完整可靠性和合格性测试数据,包括700个温度循环和UHAST(无偏高加速温度/湿度应力测试)。
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Fine-pitch Copper Pillar Flip Chips in High Reliability Applications
To keep up with the demands for smaller antennas with increased performance and decreased costs, most next generation architectures mandate higher IC (integrated circuit) chip integration. Compared to conventional packaging configurations, advanced chip packaging technologies, such as 2.5D and 3D, offer greater chip compatibility and lower power consumption. Given these advantages, the adoption of advanced packaging is inevitable. Within advanced packaging, the copper pillar interconnect is a key enabling technology, and the next logical step. This technology offers several benefits, including improved electromigration resistance, improved electrical and thermal conductivity, simplified underbump metallization (UBM), and higher I/O (input/output) density. The fine pitches that copper pillars allow helps the technology to supersede solder bump technology, which reaches its lowest pitch around 40 microns. Finer pitches allow for a higher I/O count, which increases performance. In this work, assembly of ultra-thin MMIC (monolithic microwave integrated circuit) GaN (Gallium Nitride) fine-pitch copper pillar flip chip assemblies on high density interposers was successfully demonstrated. Using 150μm pitch copper pillar flip chip, the assembly processes for both organic PCB (printed circuit board) and silicon interposers were evaluated, with both an ENIG (Electroless Nickel Immersion Gold) and eutectic tin-lead solder pad finish evaluated. For the 2D/2.5D/3D assembly process development, a standard in-house pick and place tool was used, followed by mass solder reflow, finished with an underfill for reliability test. The interconnect robustness was determined by die pull strengths, a flux stamping investigation, and cross-sections. Complete reliability and qualification test data on GaN copper pillar flip chip 2D assembly was completed, including 700 temperature cycles and UHAST (unbiased highly accelerated temperature/humidity stress test).
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