晶粒尺寸和等离子体掺杂对cvd基二维过渡金属二硫化物的影响

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI:10.1109/NANO.2016.7751338

Chih-Pin Lin, Ching-Ting Lin, Pang-Shiuan Liu, Ming‐Jiue Yu, T. Hou

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引用次数: 0

摘要

基于过渡金属二硫化物(TMD)的场效应晶体管作为集成电路的后硅解决方案目前正在积极研究。本文讨论了两个主要挑战:多晶TMD单层膜的晶粒尺寸和化学掺杂以改善TMD/金属接触。研究了表征技术及其与器件电特性的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

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2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

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