{"title":"停止氮化浆料的开发","authors":"Shoutian Li, Changzhen Jia, X. Ren","doi":"10.1109/CSTIC49141.2020.9282386","DOIUrl":null,"url":null,"abstract":"The formulation approaches on ceria-based SoN (Stop on Nitride) slurry depend on the surface charge of ceria particles. For the ceria particles with positive charges, the slurry formulation will be different from the negative charged ceria. In this paper, we discuss the pros and cons of different approaches in formulating SoN slurry. Finally, we present the CMP performance results from the SoN slurry that is formulated with positive charged ceria.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"131 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stop on Nitride Slurry Development\",\"authors\":\"Shoutian Li, Changzhen Jia, X. Ren\",\"doi\":\"10.1109/CSTIC49141.2020.9282386\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The formulation approaches on ceria-based SoN (Stop on Nitride) slurry depend on the surface charge of ceria particles. For the ceria particles with positive charges, the slurry formulation will be different from the negative charged ceria. In this paper, we discuss the pros and cons of different approaches in formulating SoN slurry. Finally, we present the CMP performance results from the SoN slurry that is formulated with positive charged ceria.\",\"PeriodicalId\":6848,\"journal\":{\"name\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"131 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC49141.2020.9282386\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The formulation approaches on ceria-based SoN (Stop on Nitride) slurry depend on the surface charge of ceria particles. For the ceria particles with positive charges, the slurry formulation will be different from the negative charged ceria. In this paper, we discuss the pros and cons of different approaches in formulating SoN slurry. Finally, we present the CMP performance results from the SoN slurry that is formulated with positive charged ceria.
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