Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian
{"title":"用于3D finFET源极/漏极扩展的等离子体掺杂工艺","authors":"Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian","doi":"10.1109/IIT.2014.6939993","DOIUrl":null,"url":null,"abstract":"A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A plasma doping process for 3D finFET source/drain extensions\",\"authors\":\"Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian\",\"doi\":\"10.1109/IIT.2014.6939993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"14 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6939993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A plasma doping process for 3D finFET source/drain extensions
A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.
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