{"title":"厚度各向异性对氧化物微半球壳腔简并模的影响","authors":"L. Sorenson, P. Shao, F. Ayazi","doi":"10.1109/MEMSYS.2013.6474204","DOIUrl":null,"url":null,"abstract":"The effect of thickness anisotropy on the degenerate elliptical resonance modes of micro-hemispherical shell resonators (μHSRs) created using the thermal oxidation process is investigated. This anisotropy arises from the variation in wet thermal oxide growth according to the exposed crystal planes of the single-crystal-silicon hemispherical mold used to generate the μHSRs. It is shown that, despite the presence of thickness anisotropy, the degenerate resonance modes of oxide μHSRs can exhibit zero intrinsic frequency split depending on the particular resonance mode and symmetry of the thickness anisotropy imparted from the underlying silicon wafer. Measured results verified by simultaneous electrical excitation on the 0° and 45° axes demonstrate less than 94 Hz intrinsic m=3 frequency split for a 1240 μm oxide μHSR (limited by measurement conditions), which is to the authors' knowledge the smallest as-fabricated frequency split reported to date for any μHSR.","PeriodicalId":92162,"journal":{"name":"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Effect of thickness anisotropy on degenerate modes in oxide micro-hemispherical shell resonators\",\"authors\":\"L. Sorenson, P. Shao, F. Ayazi\",\"doi\":\"10.1109/MEMSYS.2013.6474204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of thickness anisotropy on the degenerate elliptical resonance modes of micro-hemispherical shell resonators (μHSRs) created using the thermal oxidation process is investigated. This anisotropy arises from the variation in wet thermal oxide growth according to the exposed crystal planes of the single-crystal-silicon hemispherical mold used to generate the μHSRs. It is shown that, despite the presence of thickness anisotropy, the degenerate resonance modes of oxide μHSRs can exhibit zero intrinsic frequency split depending on the particular resonance mode and symmetry of the thickness anisotropy imparted from the underlying silicon wafer. Measured results verified by simultaneous electrical excitation on the 0° and 45° axes demonstrate less than 94 Hz intrinsic m=3 frequency split for a 1240 μm oxide μHSR (limited by measurement conditions), which is to the authors' knowledge the smallest as-fabricated frequency split reported to date for any μHSR.\",\"PeriodicalId\":92162,\"journal\":{\"name\":\"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2013.6474204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2013.6474204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of thickness anisotropy on degenerate modes in oxide micro-hemispherical shell resonators
The effect of thickness anisotropy on the degenerate elliptical resonance modes of micro-hemispherical shell resonators (μHSRs) created using the thermal oxidation process is investigated. This anisotropy arises from the variation in wet thermal oxide growth according to the exposed crystal planes of the single-crystal-silicon hemispherical mold used to generate the μHSRs. It is shown that, despite the presence of thickness anisotropy, the degenerate resonance modes of oxide μHSRs can exhibit zero intrinsic frequency split depending on the particular resonance mode and symmetry of the thickness anisotropy imparted from the underlying silicon wafer. Measured results verified by simultaneous electrical excitation on the 0° and 45° axes demonstrate less than 94 Hz intrinsic m=3 frequency split for a 1240 μm oxide μHSR (limited by measurement conditions), which is to the authors' knowledge the smallest as-fabricated frequency split reported to date for any μHSR.