{"title":"采用金属有机化学气相沉积法生长InGaAs/InP双异质结双极晶体管","authors":"M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta","doi":"10.1109/ICIPRM.1991.147344","DOIUrl":null,"url":null,"abstract":"The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition\",\"authors\":\"M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta\",\"doi\":\"10.1109/ICIPRM.1991.147344\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147344\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition
The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<>
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