{"title":"III-V型氮化物微悬臂位移传感器","authors":"A. Talukdar, G. Koley","doi":"10.1109/TRANSDUCERS.2015.7180891","DOIUrl":null,"url":null,"abstract":"The application of gated piezoresitor (or `piezotransistor') embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":"9 1","pages":"180-183"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"III–V nitride microcantilever as a displacement sensor\",\"authors\":\"A. Talukdar, G. Koley\",\"doi\":\"10.1109/TRANSDUCERS.2015.7180891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The application of gated piezoresitor (or `piezotransistor') embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.\",\"PeriodicalId\":6465,\"journal\":{\"name\":\"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"volume\":\"9 1\",\"pages\":\"180-183\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2015.7180891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2015.7180891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
III–V nitride microcantilever as a displacement sensor
The application of gated piezoresitor (or `piezotransistor') embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.
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