在Au纳米结构上形成As2S3和Se薄膜的表面增强拉曼散射

V. Yukhymchuk, V. M. Rubish, V. Dzhagan, O. Hreshchuk, O. Isaieva, N. Mazur, M. Durkot, A. Kryuchyn, V. Kyrylenko, V. M. Novichenko, V.V. Kremenytskyi, Z. Maksimenko, M. Valakh
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摘要

研究了等离子体纳米结构(NSs)对硫系薄膜拉曼光谱和底层结构变化的影响。采用热溅射的方法在基于金纳米结构的玻璃和表面增强拉曼光谱(SERS)衬底上沉积了数十纳米厚的as2o3和Se薄膜,并进行了比较。玻璃上的薄膜几乎无法用拉曼光谱检测到。使用金纳米粒子作为衬底,可以可靠地记录as2o3和Se薄膜的拉曼光谱。注册的拉曼光谱包含了厚度大于等于1 μm薄膜的所有特征。通过对不同激发波长下的光谱分析,我们可以得出结论,SERS化学机制是硫系化合物薄膜拉曼信号增强的主要原因。调整SERS衬底的参数以调整其等离子体带位置与激发激光辐射的共振,可以增加等离子体增强的贡献。除了增强效应外,金纳米粒子中的局部等离子体共振还会引起其周围硫系化合物膜的局部加热,从而导致局部结构转变,这可以通过拉曼光谱来控制。
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Surface-enhanced Raman scattering of As2S3 and Se thin films formed on Au nano-structures
The effect of plasmonic nanostructures (NSs) on the Raman spectra and underlying structural changes in thin chalcogenide films is investigated. Several tens of nanometers thick As 2 S 3 and Se films were deposited by thermal sputtering on glass and surface-enhanced Raman spectroscopy (SERS) substrates based on gold nanostructures for comparison. The films on glass were practically not detectable by the Raman spectroscopy. Using gold NSs as the substrates enabled reliable registration of the Raman spectra of both the As 2 S 3 and Se films. The registered Raman spectra contained all the features usually present in the films with the thicknesses ~1 μm or more. Based on our analysis of the spectra obtained at different excitation wavelengths, we may conclude that the SERS chemical mechanism makes the main contribution to the enhancement of the Raman signal from chalcogenide films. Adjustment of the parameters of SERS substrates to tune their plasmon band position in resonance with the excitation laser radiation enables increasing the plasmonic enhancement contribution. Besides the effect of enhancement, localized plasmon resonance in the gold NSs causes local heating of the chalcogenide film around them leading to local structural transformations, which can be controlled using the Raman spectra.
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