Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna

Recently, heavy emitter doping rather than decreasing the barrier thickness has boosted the peak current density of resonant tunneling diodes (RTDs) above 1,000 kA/cm2. Based on this achievement very mature InP-based RTD with current densities above 500 kA/cm2 are nowadays the leading solid-state THz device [1, 2]. Here, we show that even triple-barrier RTD (TBRTD) devices now reach a current density in excess of 250 kA/cm2 making this element ideally suited for rectification [3] but now at THz frequencies. Figure 1 is the state of art of THz detection sensitivity of previously reported zero bias detectors. Focusing on such zero bias broadband THz detection, we have also been studying on a design policy for a μm-sized on-chip self-complementally antenna and especially we have reported basic performances of a bow-tie antenna[4,5] integrated with a conventional homogeneous semiconductor mesa structure. However, it was still limited studies considering neither of actual nonlinear devices and peripheral circuits.