利用DLC薄膜的电学性质鉴定不同浓度的抗体

V. Amornkitbamrung, Kridsanapan Srimongkon, N. Faibut, Samarn Saekow
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摘要

采用RF-CVD技术对在硅衬底上生长的类金刚石碳薄膜的疏水性能、电学性能、金刚石与石墨含量比和x射线衍射图进行了表征。在这个试验中播种技术是多种多样的。用超声波清洗机用丙酮、甲醇和去离子水三种不同的溶剂清洗硅衬底,每种溶剂清洗约5分钟。电沉积技术采用4-5纳米大小的金刚石粉悬浮在0.0010g/50ml的甲醇中。电极间电压30v,播种时间25min。这些是播种条件。正常播种,正常播种后用超声波清洗机在甲醇中清洗,同时播种和清洗是三种不同的播种技术。采用RF-CVD生长DLC薄膜,功率为100 W,压力为8.5 mbar,生长时间为30 min, H2和CH4的流速分别为6.50和1.50 sccm。结果表明,三种播种技术的结果比较接近,具有疏水性,XRD谱图比较接近。采用Van der paw 4点探针技术测量了iv特性。当在膜上滴入纯水和几种浓度的抗体时,可以区分它们的iv曲线。
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Identification of different concentrations of antibody by electrical property of DLC thin films
Hydrophobic properties, electrical properties, ratio of diamond and graphite contents and X-ray diffraction pattern are characterized of diamond-like-carbon thin films which are grown on silicon substrate by RF-CVD. Seeding techniques are varied in this experiment. Silicon substrate is cleaned with three different solvents by ultrasonic cleaner i.e. acetone, methanol, and de-ionized water about 5 minutes in each solvent. The size of 4–5 nanometers diamond powder suspension in methanol of 0.0010g/50ml is used for electro-deposition technique. Voltage between electrodes is 30 V and seeding times is 25 minutes. These are seeding conditions. Normal seeding, normal seeding then cleaning by ultrasonic cleaner in methanol, and seeding and cleaning at the same time are three different seeding techniques. DLC thin films are grown by RF-CVD at power of 100 W, pressure of 8.5 mbar, growth time of 30 minutes and H2 and CH4 flow rate of 6.50 and 1.50 sccm respectively. It is found that the results of the three techniques of seeding are nearby, for example, they have a hydrophobic property and their XRD patterns are quite similar. IV-characteristic is measured by Van der Pauw 4 point probe technique. When pure water, and several concentrations of antibody are dropped on the films, their IV-curves can be distinguished.
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