具有高固有带宽的InGaAsP二极管激光器

J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su
{"title":"具有高固有带宽的InGaAsP二极管激光器","authors":"J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su","doi":"10.1109/ICIPRM.1991.147337","DOIUrl":null,"url":null,"abstract":"The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"122 19","pages":"204-207"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"InGaAsP diode lasers with high intrinsic bandwidth\",\"authors\":\"J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su\",\"doi\":\"10.1109/ICIPRM.1991.147337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"122 19\",\"pages\":\"204-207\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

讨论了具有极大本征共振频率的激光器的固有频率响应和最大调制带宽,从而具有非常高的3db调制带宽电位。结果表明,在没有电寄生的情况下。调制带宽接近50 GHz,并且具有大差分增益的激光器能够在相对较低的工作功率下实现非常高的带宽。
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InGaAsP diode lasers with high intrinsic bandwidth
The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers.<>
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