Al2O3和HfO2电介质原子层沉积缺陷评估与泄漏控制

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481396

M. B. González, J. M. Rafí, O. Beldarrain, M. Zabala, F. Campabadal

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摘要

在这项工作中，系统地研究了基于Al2O3和HfO2介质的MOS电容器的电学特性，从而分析了预先存在的电活性缺陷、应力诱导降解和介质击穿现象对泄漏电流行为的影响。

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Defect assessment and leakage control in atomic layer deposited Al2O3 and HfO2 dielectrics

In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.

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2013 Spanish Conference on Electron Devices

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